title
  • image of FET, MOSFET Arrays>NDS8852H
  • image of FET, MOSFET Arrays>NDS8852H
  • Part number NDS8852H
    Product classification FET, MOSFET Arrays
    Description MOSFET N/P-CH 30V 4.3A 8SOIC
    Encapsulation Tape & Reel (TR)
    Quantity 6500
    Price
    RoHS status NO
    Specifications
    PDF(1)
    TYPEDESCRIPTION
    MfrSanyo Semiconductor/onsemi
    Series-
    PackageTape & Reel (TR)
    Product StatusOBSOLETE
    Package / Case8-SOIC (0.154", 3.90mm Width)
    Mounting TypeSurface Mount
    ConfigurationN and P-Channel
    Operating Temperature-55°C ~ 150°C (TJ)
    TechnologyMOSFET (Metal Oxide)
    Power - Max1W
    Drain to Source Voltage (Vdss)30V
    Current - Continuous Drain (Id) @ 25°C4.3A, 3.4A
    Input Capacitance (Ciss) (Max) @ Vds300pF @ 15V
    Rds On (Max) @ Id, Vgs80mOhm @ 3.4A, 10V
    Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
    FET FeatureLogic Level Gate
    Vgs(th) (Max) @ Id2.8V @ 250µA
    Supplier Device Package8-SOIC